Semiconductor non-volatile storage device

Details Semiconductor non-volatile storage device Semiconductor non-volatile storage device

2007-02-20

2007-02-20

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including specified plural element logic arrangement

C365S185170, C365S185110, C365S185130, C365S185050, C365S185160

Reexamination Certificate

active

11156538

ABSTRACT:
A semiconductor non-volatile storage device of the present invention which lets a memory cell directly drive up to a local bit line, wherein the output of the local bit line is received by a gate electrode of a separately-provided signal amplifying transistor, and the signal amplifying transistor is used to drive a global bit line having a large load capacity. Since an amplifying transistor having a drive power higher than a memory cell drives the parasitic capacity of a global bit line, information stored in a memory cell can be read out at high speed. Therefore, the storage device is used for storing program codes for controlling microcomputers or the like to thereby enhance a system performance.

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