Method of separating MEMS devices from a composite structure

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

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Details

C438S021000, C438S113000, C438S458000, C438S464000

Reexamination Certificate

active

11273271

ABSTRACT:
A method of separating MEMS devices from a structure having a substrate, a sacrificial layer positioned on a front side of the substrate and a plurality of MEMS devices embedded in the sacrificial layer includes the step of securing a front handle wafer to the sacrificial layer. The substrate is etched from a back side to the sacrificial layer to define individual MEMS integrated circuits held together with the sacrificial layer. The front handle wafer is removed and the sacrificial layer is etched away to release the MEMS integrated circuits.

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