Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-11-13
2007-11-13
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S775000, C257SE23145
Reexamination Certificate
active
10301957
ABSTRACT:
A low-k dielectric sacrificial material is formed within a microelectronic structure covered with a suitable porous or low density permeable material. At an appropriate time, the underlying sacrificial material is decomposed and diffused away through the overlying permeable material. As a result, at least one void is created, contributing to desirable dielectric characteristics.
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Kloster Grant M.
Leu Jihperng
Morrow Xiarong
Guglielmi David L.
Intel Corporation
Thomas Toniae M
Wilczewski Mary
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