Methods for fabricating a semiconductor device with etch end...

Details Methods for fabricating a semiconductor device with etch end... Methods for fabricating a semiconductor device with etch end...

2007-02-27

2007-02-27

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

Reexamination Certificate

active

10734818

ABSTRACT:
The present invention relates to a fabrication method of a semiconductor device using EPD system, which enables uniform hole etching regardless of changes of etch rates of etching chemical and thickness of interlayer insulating layer after CMP, and the fabrication method comprises: forming a nitride layer on an interlayer insulating layer; forming a photoresist layer on the nitride layer, and exposing and developing the photoresist layer to form a photoresist pattern; etching the nitride layer using the photoresist pattern as a mask and contiguously etching the photoresist pattern and the interlayer insulating layer together; setting etch stop point as the point that the photoresist pattern is removed by etching and thus the nitride layer is exposed.

REFERENCES:
patent: 4376672 (1983-03-01), Wang et al.
patent: 5612254 (1997-03-01), Mu et al.
patent: 6040619 (2000-03-01), Wang et al.
patent: 6063711 (2000-05-01), Chao et al.
patent: 6245633 (2001-06-01), Zhao et al.
patent: 6383943 (2002-05-01), Chen et al.

Affiliated with

Also associated with

Rating

Methods for fabricating a semiconductor device with etch end... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for fabricating a semiconductor device with etch end..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for fabricating a semiconductor device with etch end... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3869520