Memory cell array and method for manufacturing it

Details Memory cell array and method for manufacturing it Memory cell array and method for manufacturing it

2007-08-28

2007-08-28

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S173000

Reissue Patent

active

10431849

ABSTRACT:
In a storage cell array, a first and a second line are provided which have a crossing point, at which a storage element with magnetoresistive effect is disposed. A yoke is provided which surrounds one of the lines and that contains magnetizable material with a permeability of at least 10. The yoke is disposed in such a way that a magnetic flow is closed substantially through the storage element.

REFERENCES:
patent: 4455626 (1984-06-01), Lutes
patent: 5039655 (1991-08-01), Pisharody
patent: 5587943 (1996-12-01), Torok et al.
patent: 5703733 (1997-12-01), Suzuki et al.
patent: 5732016 (1998-03-01), Chen et al.
patent: 6005798 (1999-12-01), Sakakima et al.
patent: 0 776 011 (1997-05-01), None
patent: 0 776 011 (1997-11-01), None
patent: 0 875 901 (1998-11-01), None
patent: 0 875 901 (1999-11-01), None
patent: 02 093 373 (1990-04-01), None
patent: 10 004 227 (1998-01-01), None
patent: 10 162 326 (1998-06-01), None
patent: 10 190 090 (1998-07-01), None
Stefan Mengel: “Technologieanalyse XMR-Technologien Technologie-Früherkennung” [technology analysis XMR-technologies, early recognition of technology],I-Technologiezentrum Physikalische Technologie, Düsseldorf, 1997, pp. 1-80.
Mark H. Kryder et al.: “Magnetic Properties and Domain Structures in Narrow NiFe Stripes”, IEEE Transactions on Magnetics, vol. Mag-16, No. 1, Jan. 1980, pp. 99-103.
D.D. Tang et al: “Spin-Valve RAM Cell”, IEEE Transactions on Magnetics, vol. 31, No. 6, Nov. 1995, pp. 3206-3208.
J.M. Daughton: “Magnetic tunneling applied to memory (invited)”, J. Appl. Phys. vol. 81 No. 8, Apr. 15, 1997, pp. 3758-3763.
Yu Lu et al.: “Shape-anisotrophy-controlled magnetoresistive response in magnetic tunnel junctions”, Appl. Phys. Lett. vol. 70 No. 19, May 1997, pp. 2610-2612.
Haruki Yamane et al.: “Differential type giant magnetoresistive memory using spin-valve film with a NiO pinning layer”, Journal of Applied Physics, vol. 83, No. 9, May 1, 1998, pp. 4862-4868.

Affiliated with

Also associated with

Rating

Memory cell array and method for manufacturing it does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory cell array and method for manufacturing it, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory cell array and method for manufacturing it will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3869399