Semiconductor device and manufacturing method thereof

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S612000, C257SE21509

Reexamination Certificate

active

11028861

ABSTRACT:
In a manufacturing method of a semiconductor device, a substrate and a plurality of semiconductor chips stacked on the substrate are connected to each other by a ball bonding method adopting a reverse method. Specifically, after first bonding on a bonding pad on the substrate, a gold wire is led to a bonding pad of a semiconductor chip of the bottom layer, and by second bonding, a wire for connecting the substrate and the semiconductor chip of the bottom layer is formed. Similarly, other semiconductor chips are also connected to the substrate from the layer on the bottom. As a result, it is possible to reduce the package size, to provide a sufficient clearance between wires, and to reduce restrictions on combinations of semiconductor chips to be stacked.

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