Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-12-18
2007-12-18
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S421000, C257S422000, C257S424000, C257SE29323, C360S112000, C360S125330, C324S246000, C324S249000, C324S252000, C365S065000, C365S097000, C365S145000, C365S171000
Reexamination Certificate
active
11375854
ABSTRACT:
A thin film sensing device operates based on a spin polarized current. The spin device includes ferromagnetic layers characterized by different coercivities and/or magnetization states, and one or more low transmission barriers in between. The device is further configured so that the spin polarized current flows at least in part in a direction perpendicular to the aforementioned layers.
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Gross J. Nicholas
Pert Evan
Seagate Technology LLC
Wilson Scott R.
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