Methods for use of pulsed voltage in a plasma reactor

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S706000, C438S710000, C156S345230

Reexamination Certificate

active

10408542

ABSTRACT:
A method and apparatus for providing a positive voltage spike to a semiconductor substrate pedestal during a portion of a high voltage power bias oscillation cycle to reduce or eliminate the detrimental effects of feature charging during the operation of a plasma reactor.

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International Search Report dated Mar. 28, 2002 (4 pages).

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