Semiconductor memory device and method of manufacturing the...

Details Semiconductor memory device and method of manufacturing the... Semiconductor memory device and method of manufacturing the...

2007-02-13

2007-02-13

Luu, Chuong Anh (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S301000, C257S320000

Reexamination Certificate

active

10806399

ABSTRACT:
A semiconductor memory device includes a first insulation film which is provided on the inner surface of a trench formed in a semiconductor substrate and has its top located above the surface of the semiconductor substrate. A diffusion layer is formed within the semiconductor substrate, surrounding the deep portion of the trench. A first conductive layer is filled in the trench. A gate electrode is provided on a gate insulation layer formed on the surface of the semiconductor substrate. Source/drain diffusion layers are formed in the surface of the semiconductor substrate and sandwich a channel region below the gate electrode. A second conductive layer extends on the first conductive layer, the first insulation layer, and one of the source/drain diffusion layers.

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