Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2007-06-26

2007-06-26

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S514000, C438S527000

Reexamination Certificate

active

10806247

ABSTRACT:
A semiconductor device is provided, which aims to reduce the standby power thereof by reducing the leak between a body and a drain with restraining the effect on a threshold voltage, in order to actualize the highly reliable semiconductor device. When extension regions are formed, an n-type impurity less diffusive than phosphorus (P+), for example, arsenic (As+) is used as an impurity. In addition to ordinary ion implantation with high dose (high concentration) and low acceleration energy, As+ions are implanted with low dose and high acceleration energy.

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