Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-02-20
2007-02-20
Tran, Thien F (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S258000, C257S291000
Reexamination Certificate
active
10208246
ABSTRACT:
The invention relates to a semiconductor device including a plurality of thin film transistors provided on a base member having a curved surface. The surface may be bent in either a convex shape or a concave shape. All channel length directions of the plurality of thin film transistors may also be aligned in the same direction. Further, the channel length direction may be different from the direction in which the base member is bent. A pixel portion and a driver circuit portion may also be provided on the base member. The invention also includes a method of manufacturing a semiconductor device including forming a layer to be peeled including an element of a substrate, bonding a support member to the layer to be peeled, and bonding a transfer body to the layer to be peeled.
REFERENCES:
patent: 5206749 (1993-04-01), Zavracky et al.
patent: 5273475 (1993-12-01), Oshikawa
patent: 5317236 (1994-05-01), Zavracky et al.
patent: 5376561 (1994-12-01), Vu et al.
patent: 5654811 (1997-08-01), Spitzer et al.
patent: 5781164 (1998-07-01), Jacobsen et al.
patent: 5807440 (1998-09-01), Kubota et al.
patent: 5817548 (1998-10-01), Noguchi et al.
patent: 5821138 (1998-10-01), Yamazaki et al.
patent: 5879741 (1999-03-01), Itoh
patent: 5929961 (1999-07-01), Nishi et al.
patent: 5943593 (1999-08-01), Noguchi et al.
patent: 6020271 (2000-02-01), Yanagida
patent: 6043800 (2000-03-01), Spitzer et al.
patent: 6096581 (2000-08-01), Zhang et al.
patent: 6140980 (2000-10-01), Spitzer et al.
patent: 6190937 (2001-02-01), Nakagawa et al.
patent: 6261634 (2001-07-01), Itoh
patent: 6320640 (2001-11-01), Nishi et al.
patent: 6372608 (2002-04-01), Shimoda et al.
patent: 6376333 (2002-04-01), Yamazaki et al.
patent: 6423614 (2002-07-01), Doyle
patent: 6506664 (2003-01-01), Beyne et al.
patent: 6582996 (2003-06-01), Hara et al.
patent: 6627518 (2003-09-01), Inoue et al.
patent: 6664730 (2003-12-01), Weaver
patent: 2001/0022362 (2001-09-01), Hayashi et al.
patent: 2002/0004292 (2002-01-01), Yamazaki et al.
patent: 2002/0048864 (2002-04-01), Yamazaki et al.
patent: 2003/0025146 (2003-02-01), Narwankar et al.
patent: 2003/0059990 (2003-03-01), Yamazaki
patent: 2003/0062845 (2003-04-01), Yamazaki et al.
patent: 2003/0075733 (2003-04-01), Yamazaki et al.
patent: 2003/0100169 (2003-05-01), Tanaka et al.
patent: 2003/0162312 (2003-08-01), Takayama et al.
patent: 2004/0106237 (2004-06-01), Yamazaki
patent: 05-347186 (1993-12-01), None
patent: 6-214220 (1994-08-01), None
patent: 2001-085154 (2001-03-01), None
patent: 2001-189460 (2001-07-01), None
patent: 2001-267578 (2001-09-01), None
patent: 3238223 (2001-12-01), None
patent: 2002-328624 (2002-11-01), None
patent: WO 92/12453 (1992-07-01), None
patent: WO 2000/046854 (2000-08-01), None
Webster's New World Dictionary of American English, Third College Edition, Victoria Neufeldt et al., Jan. 1, 1998, p. 1479.
Takayama Toru
Yamazaki Shunpei
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