Method for forming nitrided tunnel oxide layer

Details Method for forming nitrided tunnel oxide layer Method for forming nitrided tunnel oxide layer

2007-02-27

2007-02-27

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C438S155000, C438S157000, C438S165000, C438S197000, C438S201000, C438S212000, C438S216000, C438S244000, C438S253000, C438S257000, C438S258000, C438S260000, C438S261000, C438S263000, C438S264000, C438S266000, C438S287000, C438S387000, C438S396000, C438S763000, C438S769000, C438S770000, C438S771000, C438S772000, C438S773000, C438S774000, C438S775000, C438S776000, C438S777000, C438S787000, C438S788000, C438S791000, C438S792000, C438S954000, C257SE21497, C257SE21284, C257SE21302, C257SE21353

Reexamination Certificate

active

10605782

ABSTRACT:
A method for forming a nitrided tunnel oxide layer is described. A silicon oxide layer as a tunnel oxide layer is formed on a semiconductor substrate, and a plasma nitridation process is performed to implant nitrogen atoms into the silicon oxide layer. A thermal drive-in process is then performed to diffuse the implanted nitrogen atoms across the silicon oxide layer.

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