Tuned pinned layers for magnetic tunnel junctions with...

Details Tuned pinned layers for magnetic tunnel junctions with... Tuned pinned layers for magnetic tunnel junctions with...

2007-11-27

2007-11-27

Wilczewski, Mary (Department: 2822)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C257S420000

Reexamination Certificate

active

11260907

ABSTRACT:
Apparatus and methods for optimizing a toggle window for a magnetic tunnel junction (MTJ) having a multicomponent free layer are provided. In accordance with an aspect of the invention, a MTJ comprises a free layer, a pinned layer, and a barrier layer formed between the free layer and the pinned layer. The free layer, in turn, includes a plurality of free magnetic sublayers while the pinned layer includes a plurality of pinned magnetic sublayers. Each of the pinned magnetic sublayers exerts a magnetic field on the free magnetic sublayers. To optimize the toggle window for the device, the dimensions of each of the pinned magnetic sublayers are selected to substantially equalize average magnetic fields acting on each of the free magnetic sublayers.

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D.C. Worledge, “Magnetic Phase Diagram of Two Identical Coupled Nanomagnets,” Applied Physics Letters, vol. 84, No. 15, pp. 2847-2849, Apr. 12, 2004.

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