Methods of forming integrated circuitry, methods of forming...

Details Methods of forming integrated circuitry, methods of forming... Methods of forming integrated circuitry, methods of forming...

2007-10-02

2007-10-02

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S596000, C438S238000

Reexamination Certificate

active

11003275

ABSTRACT:
The invention includes methods of forming integrated circuitry, methods of forming memory circuitry, and methods of forming field effect transistors. In one implementation, conductive metal silicide is formed on some areas of a substrate and not on others. In one implementation, conductive metal silicide is formed on a transistor source/drain region and which is spaced from an anisotropically etched sidewall spacer proximate a gate of the transistor.

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