Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2007-11-13
2007-11-13
McDonald, Rodney G. (Department: 1753)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S192120, C438S656000, C438S648000, C438S687000, C438S582000
Reexamination Certificate
active
10336271
ABSTRACT:
A method of sputtering a Ta layer comprised of alpha phase Ta on a Cu layer. An embodiment includes a Ta sputter deposition on a Cu surface at a substrate temperature less than 200° C. Another embodiment has a pre-cooling step at a temperature less than 100° C. prior to Ta layer sputter deposition. In another non-limiting example embodiment, a pre-clean step comprising an inert gas sputter is performed prior to the tantalum sputter. Another non-limiting example embodiment provides a semiconductor structure comprising: a semiconductor structure; a copper layer over the semiconductor structure; a tantalum layer on the copper layer; the tantalum layer comprised alpha phase Ta; a metal layer on the tantalum layer.
REFERENCES:
patent: 5221449 (1993-06-01), Colgan et al.
patent: 5281485 (1994-01-01), Colgan et al.
patent: 6121149 (2000-09-01), Lukanc et al.
patent: 6221757 (2001-04-01), Schmidbauer et al.
patent: 6251528 (2001-06-01), Uzoh et al.
patent: 6287977 (2001-09-01), Hashim et al.
patent: 6291885 (2001-09-01), Cabral, Jr. et al.
patent: 6297140 (2001-10-01), Uzoh et al.
patent: 6339258 (2002-01-01), Cooney, III et al.
patent: 6375743 (2002-04-01), Sundarrajan et al.
patent: 6395148 (2002-05-01), Whitman
patent: 6458255 (2002-10-01), Chiang et al.
patent: 6764940 (2004-07-01), Rozbicki et al.
patent: 6860975 (2005-03-01), Donohue et al.
patent: 6908865 (2005-06-01), Kranz et al.
patent: 1 083 596 (2001-03-01), None
patent: WO 02/065547 (2002-08-01), None
Catania et al. “Low resistivity body-centered cubic tantalum thin films as diffusion barriers between copper and silicon”, J.Vac. Sci. Technol. A 10(5), Sep./Oct. 1992 pp. 3318-3321.
Feinstien and Hutteman, “Factors controlling the structure o sputtered TA films”, Thin Solid Films 16 (1975) , pp. 129-145 (best copy attached).
Liew San Leong
Seet Chim Seng
Sudijono John
Yong Lai Lin Clare
Zhang Bei Chao
Chartered Semiconductor Manufacturing Ltd.
McDonald Rodney G.
Stoffel William J.
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