Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-06-05

2007-06-05

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27025, C257S308000, C257S532000, C257S630000, C257S758000, C438S393000, C438S396000

Reexamination Certificate

active

10112701

ABSTRACT:
A lower electrode of a capacitor element and a wiring are formed in a wiring layer that is one layer below an uppermost wiring layer. Subsequently, after the formation of a capacitance insulating film, a TiN film is formed on the entire surface thereof, and then the TiN film is patterned, thereby forming an upper electrode of a capacitor element and a lead wiring for electrically connecting the upper electrode to a wiring of a third wiring layer. Furthermore, in the uppermost layer, a shield is formed covering the upper portion of the capacitor element.

REFERENCES:
patent: 5604658 (1997-02-01), Pedder
patent: 5841190 (1998-11-01), Noda et al.
patent: 5874770 (1999-02-01), Saia et al.
patent: 6072278 (2000-06-01), Keyser et al.
patent: 6130463 (2000-10-01), Oda et al.
patent: 6180976 (2001-01-01), Roy
patent: 6198123 (2001-03-01), Linder et al.
patent: 6392297 (2002-05-01), Seto
patent: 6545926 (2003-04-01), Ooishi et al.
patent: 6630736 (2003-10-01), Ignaut
patent: 03201417 (1991-09-01), None
patent: 2001-267320 (2001-09-01), None
Japanese Office Action, Mailed Apr. 19, 2005.

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