Memory cell for a static memory and static memory comprising suc

Details Memory cell for a static memory and static memory comprising suc Memory cell for a static memory and static memory comprising suc

1979-12-19

1982-03-30

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Flip-flop

357 20, G11C 1140

Patent

active

043228216

ABSTRACT:
A memory cell for integration into a static memory includes two transistors with cross-coupled base and collector regions. The collector regions are connected to p-n junction diode load elements having at least one region of polycrystalline silicon material. The collector regions of the transistors are connected to the regions of the diodes which are of the same conductivity type as the collector regions.

REFERENCES:
patent: 3849675 (1974-11-01), Waaben
patent: 3886531 (1975-05-01), McNeill
patent: 4227203 (1980-10-01), Mikoshiba
Moore, "Schottky Barrier Diode Storage Cell", IBM Tech. Disc. Bul., vol. 14, No. 6, 11/71, p. 1683.

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