Semiconductor device having dual stacked MIM capacitor and...

Details Semiconductor device having dual stacked MIM capacitor and... Semiconductor device having dual stacked MIM capacitor and...

2007-02-20

2007-02-20

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S303000, C257S307000, C257S308000, C257S309000, C257S758000, C257S759000, C257S760000

Reexamination Certificate

active

11047817

ABSTRACT:
Semiconductor devices having a dual stacked MIM capacitor and methods of fabricating the same are disclosed. The semiconductor device includes a dual stacked MIM capacitor formed on the semiconductor substrate. The dual stacked MIM capacitor includes a lower plate positioned, an upper plate electrically connected to the lower plate and positioned above the lower plate, and an intermediate plate interposed between the lower plate and the upper plate. An upper interconnection line is positioned at the same level as the upper plate. The upper interconnection line is electrically connected to the intermediate plate. As a result, the upper plate may be formed by a damascene process.

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