Nanoelectromechanical transistors and switch systems

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C977S732000

Reexamination Certificate

active

10886648

ABSTRACT:
Nanoelectromechanical switch systems (NEMSS) that are structured around the mechanical manipulation of nanotubes are provided. Such NEMSS can realize the functionality of, for example, automatic switches, adjustable diodes, amplifiers, inverters, variable resistors, pulse position modulators (PPMs), and transistors.In one embodiment, a nanotube is anchored at one end to a base member. The nanotube is also coupled to a voltage source. This voltage source creates an electric charge at the tip of the free-moving-end of the nanotube that is representative of the polarity and intensity of the voltage source. The free-moving end of this nanotube can be electrically controlled by applying an electric charge to a nearby charge member layer that is either of the same (repelling) or opposite (attracting) polarity of the nanotube. A contact layer is then placed in the proximity of the free-moving end of the nanotube such that when a particular electric charge is placed on the nanotube, the nanotube electrically couples the contact layer.

REFERENCES:
patent: 2979551 (1961-04-01), Pack
patent: 3181365 (1965-05-01), Maninger
patent: 3252013 (1966-05-01), Stanton
patent: 3365653 (1968-01-01), Gabor et al.
patent: 3495101 (1970-02-01), Slonneger
patent: 3500451 (1970-03-01), Stephen
patent: 3508089 (1970-04-01), Cheshire
patent: 3609593 (1971-09-01), Boil et al.
patent: 4152537 (1979-05-01), Hansch
patent: 4387318 (1983-06-01), Kolm et al.
patent: 4536674 (1985-08-01), Schmidt
patent: 4595864 (1986-06-01), Stiefelmeyer et al.
patent: 4814657 (1989-03-01), Yano et al.
patent: 4966649 (1990-10-01), Harada et al.
patent: 5065085 (1991-11-01), Aspden et al.
patent: 5132934 (1992-07-01), Quate et al.
patent: 5216631 (1993-06-01), Sliwa, Jr.
patent: 5578976 (1996-11-01), Yao
patent: 5619061 (1997-04-01), Goldsmith et al.
patent: 5621258 (1997-04-01), Stevenson
patent: 5638946 (1997-06-01), Zavracky
patent: 5649454 (1997-07-01), Midha et al.
patent: 5677823 (1997-10-01), Smith
patent: 5768192 (1998-06-01), Eitan
patent: 5780727 (1998-07-01), Gimzewski et al.
patent: 5835477 (1998-11-01), Binnig et al.
patent: 5964242 (1999-10-01), Slocum
patent: 6011725 (2000-01-01), Eitan
patent: 6054745 (2000-04-01), Nakos et al.
patent: 6069540 (2000-05-01), Berenz et al.
patent: 6073484 (2000-06-01), Miller et al.
patent: 6114620 (2000-09-01), Zuppero et al.
patent: 6123819 (2000-09-01), Peeters
patent: 6127744 (2000-10-01), Streeter et al.
patent: 6127765 (2000-10-01), Fushinobu
patent: 6157042 (2000-12-01), Dodd
patent: 6160230 (2000-12-01), McMillan et al.
patent: 6256757 (2001-07-01), Arkin
patent: 6261469 (2001-07-01), Zakhidov et al.
patent: 6300756 (2001-10-01), Sturm et al.
patent: 6327909 (2001-12-01), Hung et al.
patent: 6424079 (2002-07-01), Carroll
patent: 6433543 (2002-08-01), Shahinpoor et al.
patent: 6445006 (2002-09-01), Brandes et al.
patent: 6445109 (2002-09-01), Per.cedilla.in et al.
patent: 6509605 (2003-01-01), Smith
patent: 6515339 (2003-02-01), Shin et al.
patent: 6528785 (2003-03-01), Nakayama et al.
patent: 6548841 (2003-04-01), Frazier et al.
patent: 6559550 (2003-05-01), Herman
patent: 6574130 (2003-06-01), Segal et al.
patent: 6593666 (2003-07-01), Pinkerton
patent: 6593731 (2003-07-01), Roukes et al.
patent: 6597048 (2003-07-01), Kan
patent: 6611033 (2003-08-01), Hsu et al.
patent: 6643165 (2003-11-01), Segal et al.
patent: 6653547 (2003-11-01), Akamatsu
patent: 6669256 (2003-12-01), Nakayama et al.
patent: 6672925 (2004-01-01), Talin et al.
patent: 6674932 (2004-01-01), Zhang et al.
patent: 6685810 (2004-02-01), Noca et al.
patent: 6708491 (2004-03-01), Weaver et al.
patent: 6730370 (2004-05-01), Olafsson
patent: 6756795 (2004-06-01), Hunt et al.
patent: 6762116 (2004-07-01), Skidmore
patent: 6774533 (2004-08-01), Fujita et al.
patent: 6803840 (2004-10-01), Kowalcyk et al.
patent: 6805390 (2004-10-01), Nakayama et al.
patent: 6806624 (2004-10-01), Lee et al.
patent: 6828800 (2004-12-01), Reich et al.
patent: 6846682 (2005-01-01), Heath et al.
patent: 6848320 (2005-02-01), Miyajima et al.
patent: 6882051 (2005-04-01), Majumdar et al.
patent: 6905655 (2005-06-01), Gabriel et al.
patent: 6911682 (2005-06-01), Rueckes et al.
patent: 6914329 (2005-07-01), Lee et al.
patent: 6953977 (2005-10-01), Mlcak et al.
patent: 7071023 (2006-07-01), Bertin et al.
patent: 7095645 (2006-08-01), Pinkerton et al.
patent: 2002/0024099 (2002-02-01), Wantanabe et al.
patent: 2002/0039620 (2002-04-01), Shahinpoor et al.
patent: 2002/0043895 (2002-04-01), Richards et al.
patent: 2002/0167374 (2002-11-01), Hunt et al.
patent: 2002/0175408 (2002-11-01), Majumdar et al.
patent: 2002/0180306 (2002-12-01), Hunt et al.
patent: 2003/0033876 (2003-02-01), Roukes et al.
patent: 2003/0036332 (2003-02-01), Talin
patent: 2003/0172726 (2003-09-01), Yasutake et al.
patent: 2003/0175161 (2003-09-01), Gabriel et al.
patent: 2004/0157304 (2004-08-01), Guo
patent: 2004/0239210 (2004-12-01), Pinkerton et al.
patent: 2004/0240252 (2004-12-01), Pinkerton et al.
patent: 2005/0104085 (2005-05-01), Pinkerton et al.
patent: 2005/0179339 (2005-08-01), Pinkerton et al.
patent: 2005/0258717 (2005-11-01), Mullen
patent: 101 23 876 (2002-11-01), None
patent: 0518283 (1992-12-01), None
patent: 09977345 (2000-02-01), None
patent: 02004516 (1990-01-01), None
patent: WO 01/03208 (2001-01-01), None
patent: WO 01/20760 (2001-03-01), None
patent: WO 01/93343 (2001-12-01), None
patent: WO 02/080360 (2002-10-01), None
patent: WO 03/001657 (2003-01-01), None
patent: WO 03/021613 (2003-03-01), None
patent: WO03/078305 (2003-09-01), None
Rueckes et al., “Carbon nanotube-based nonvolatile random access memory for molecular computing,” Science, vol. 289 (Jul. 7, 2000), pp. 94-97.
Halg, Beat, “On a micro-electro-mechanical nonvolatile memory cell,” IEEE Trans., Electron Devices, vol. 37, No. 10 (Oct. 1990) pp. 2230-2236.
White D R et al., “The status of Johnson Noise Thermometry,” Metrologia Bur. Int. Poids & measures, France, vol. 33, 1996, pp. 325-335.
Dequesnes M et al., “Calculation of pull-in voltages for carbon-nanotube-based nanoelectromechanical switches,” nanotechnology IOP publishing UK, vol. 13, Jan. 22, 2002, pp. 120-131.
Baughman et al. “Carbon Nanotube Actuators,” Science American Association for the Advancement of Science, U.S., vol. 284, May 21, 1999, pp. 1340-1344.
Halliday et al.; “Physica. Third Edition”; John Wiley & Sons, Inc.; 1978; pp. 529-531.
Kinaret J.M., et al. “A Carbon-Nanotube-Based Nanorelay”, Applied Physics Letters, American Institute of Physics, New York, USA, vol. 8, No. 8, pp. 1287-1289.
Sung et al. “Well-aligned carbon nitride nanotubes synthesized in ariodic alumina by electron cyclotron resonance chemical vapor deposition,” Applied Physics Letters, vol. 74, No. 2, pp. 197-199, Jan. 11, 1999.
Database Inspec Online!, Institute of Electrical Engineers, Stevenage, GB; Ponomarenko et al. “Properties of Boron carbon nanotubes: density-functional-based tight-binding calculations,” Database accession No. 7588110, XP002278946, abstract Physical Review B (Condensed Matter and material Physics), vol. 67, No. 12, pp. 125401-1-5, Mar. 15, 2003.
Baughman et al., “Carbon Nanotubes Actuators,” Science, May 21, 1999, Issue 5418, vol. 284, pp. 1240-1344.
Cleland et al., “Fabrication of High Frequency Nanometer Scale Mechanical Resonators from Bulk Si Crystals,” Appl. Phys. Lett. 69(18), Oct. 28, 1996.
Dresselhaus et al.; “Carbon Nanotubes: Synthesis, Structure, Properties, and Applications”; Springer-Verlag Berlin Heidelberg 2001; pp. 198-199, 292-293.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Nanoelectromechanical transistors and switch systems does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nanoelectromechanical transistors and switch systems, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nanoelectromechanical transistors and switch systems will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3858209

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.