High-breakdown-voltage MOS transistor

Details High-breakdown-voltage MOS transistor High-breakdown-voltage MOS transistor

1994-12-09

1996-06-04

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257409, 257492, 257493, H01L 2358

Patent

active

055236014

ABSTRACT:
A high-breakdown-voltage MOS transistor includes a substrate of one conductivity and a semiconductor layer of the other conductivity type, a drain electrode, a diffusion layer of one conductivity type, a base region of one conductivity type, a source region, a gate electrode, a source electrode, and a heavily doped layer. The diffusion layer and the substrate are electrically connected to the source region.

REFERENCES:
patent: 4422089 (1983-12-01), Vaes et al.
patent: 4922327 (1990-05-01), Mena et al.

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