Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2007-10-09
2007-10-09
Elms, Richard T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S189020, C365S185180, C365S185220, C365S185240
Reexamination Certificate
active
11124253
ABSTRACT:
A transmission transistor transmitting a drain voltage is connected to an electrically rewritable nonvolatile memory cell. An operation control circuit controls program operation for increasing a threshold voltage of the memory cell, and verify operation which is performed before and after the program operation in order to verify the threshold voltage of the memory cell. A drain switching circuit connects during the verify operation a gate of the transmission transistor to a first voltage line through which a first voltage is supplied, and it connects during the program operation the same to a second voltage line through which a second voltage is supplied. Since the second voltage can be supplied to the transmission transistor only by the switching operation (selecting operation) of the drain switching circuit, the program operation can be started shortly after the verify operation. This can shorten the data write time to the memory cell.
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Arent Fox LLP.
Elms Richard T.
Fujitsu Limited
Wendler Eric
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