Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2007-08-14

2007-08-14

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S660000, C438S669000, C438S672000, C438S675000, C438S687000

Reexamination Certificate

active

11027851

ABSTRACT:
The present invention provides a Cu line and method of forming the same, by which reliability (e.g., EM, BTS and the like) can be enhanced by replacing SiN by HfOx, which plays a role as a protective layer and/or an etch stop layer on a Cu line, prevents or inhibits galvanic corrosion due to Cu oxide, and inhibits or reduces additional formation of Cu oxide by gathering or scavenging oxygen atoms from —OH, O2, and H2O. The present method includes the steps of forming a trench in an insulating layer on a substrate, forming a planarized Cu layer in the trench, forming a HfOxlayer on the planarized Cu layer, and thermally treating the substrate.

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