Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-06-05
2007-06-05
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S291000, C257SE27133
Reexamination Certificate
active
10842443
ABSTRACT:
A solid-state image sensor includes, in each pixel, a p-type well provided on a semiconductor substrate, a photodiode provided in the p-type well, a transfer gate for transferring photocharges accumulated in the photodiode, and an n-type diffusion region for receiving the transferred photocharges. The photodiode includes a first n-type accumulation region, and a second n-type accumulation region having a concentration higher than that of the first accumulation region and provided at a position deeper than the first accumulation region. The first accumulation region extends toward an end of the transfer gate, and the second accumulation region is separate from the transfer gate.
REFERENCES:
patent: 5471515 (1995-11-01), Fossum et al.
patent: 5675158 (1997-10-01), Lee
patent: 5841126 (1998-11-01), Fossum et al.
patent: 5892253 (1999-04-01), Merrill
patent: 5977576 (1999-11-01), Hamasaki
patent: 6023081 (2000-02-01), Drowley et al.
patent: 6118142 (2000-09-01), Chen et al.
patent: 6127697 (2000-10-01), Guidash
patent: 6320200 (2001-11-01), Reed et al.
patent: 6504193 (2003-01-01), Ishiwata et al.
patent: 6661459 (2003-12-01), Koizumi et al.
patent: 6683349 (2004-01-01), Taniguchi et al.
patent: 6706550 (2004-03-01), Lee et al.
patent: 6707080 (2004-03-01), Wang et al.
patent: 6765247 (2004-07-01), Beasom
patent: 2001/0030701 (2001-10-01), Hiyama et al.
patent: 2001/0054724 (2001-12-01), Kamashita et al.
patent: 2002/0022309 (2002-02-01), Dierickx
patent: 2004/0017496 (2004-01-01), Koizumi et al.
patent: 59-198756 (1984-11-01), None
patent: 8-335690 (1996-12-01), None
patent: 2000-091552 (1998-11-01), None
patent: 11-274454 (1999-10-01), None
patent: 11-274457 (1999-10-01), None
patent: 2000-091552 (2000-03-01), None
patent: 2001-245216 (2001-09-01), None
Mandala Jr. Victor A.
Pert Evan
LandOfFree
Solid-state image sensor, production method for solid-state... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Solid-state image sensor, production method for solid-state..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solid-state image sensor, production method for solid-state... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3854862