MFS type field effect transistor, its manufacturing method,...

Details MFS type field effect transistor, its manufacturing method,... MFS type field effect transistor, its manufacturing method,...

2007-08-28

2007-08-28

Baumeister, B. William (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29272

Reexamination Certificate

active

11108933

ABSTRACT:
A MFS type field effect transistor includes a semiconductor layer, a PZT system ferroelectric layer formed on the semiconductor layer, a gate electrode formed on the PZT system ferroelectric layer, and an impurity layer composing a source or a drain, formed in the semiconductor layer. The PZT system ferroelectric layer includes Nb that replaces a Ti composition by 2.5 mol % or more but 40 mol % or less.

REFERENCES:
patent: 5552623 (1996-09-01), Nishizawa et al.
patent: 6825517 (2004-11-01), Dimmler et al.
patent: 6908802 (2005-06-01), Ramesh
patent: 2003/0227803 (2003-12-01), Natori et al.
patent: 2001-0037449 (2001-05-01), None
patent: 2003-0036405 (2003-05-01), None
Communication from Korean Patent Office regarding counterpart application.

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