Method of wafer bumping for enabling a stitch wire bond in...

Details Method of wafer bumping for enabling a stitch wire bond in... Method of wafer bumping for enabling a stitch wire bond in...

2007-06-19

2007-06-19

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S614000, C438S617000, C257SE21174

Reexamination Certificate

active

10928512

ABSTRACT:
A method of bumping a wafer for facilitating bonding of bond wires to elevate the bond location above the passivation layer. The wafer is bumped by disposing the wafer in at least one electroless bath having a nickel-containing solution therein, wherein bumps having a nickel-containing material are formed simultaneously on the exposed bond pads to an elevation sufficient to prevent damage to a passivation layer surrounding the bond pads by contact of a wire bonding capillary. A gold or palladium cap may optionally be formed over the nickel-containing material of the bumps. A method of forming a semiconductor device assembly is also disclosed.

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Material from 10thAnnual International KGD Packaging and Test Workshop, Sep. 8-10, 2003 NAPA, California.

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