Methods for forming resistors for integrated circuit devices

Details Methods for forming resistors for integrated circuit devices Methods for forming resistors for integrated circuit devices

Filed on

2007-08-28

Date issued

2007-08-28

Examiner

Estrada, Michelle (Department: 2823)

Patent Class

Semiconductor device manufacturing: process

SubClass

Making passive device

SubSubClass

Resistor

Other Related Categories

C438S171000, C257SE21017, C257SE21020

Type

Reexamination Certificate

Status

active

Patent number

10961896

Description

ABSTRACT:
Methods of forming an integrated circuit device may include forming an insulating layer on an integrated circuit substrate, forming a first conductive layer on the insulating layer, and forming a second conductive layer on the first conductive layer so that the first conductive layer is between the second conductive layer and the insulating layer. Moreover, the first conductive layer may be a layer of a first material, the second conductive layer may be a layer of a second material, and the first and second materials may be different. A hole may be formed in the second conductive layer so that portions of the first conductive layer are exposed through the hole. After forming the hole in the second conductive layer, the first and second conductive layers may be patterned so that portions of the first and second conductive layers surrounding portions of the first conductive layer exposed through the hole are removed while maintaining portions of the first conductive layer previously exposed through the hole.

REFERENCES:
patent: 6400252 (2002-06-01), Smith et al.
patent: 6531758 (2003-03-01), Shin et al.
patent: 2001/0019301 (2001-09-01), Shibuya et al.
patent: 2002/0166218 (2002-11-01), Barber

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