Method for making a semiconductor device including a...

Details Method for making a semiconductor device including a... Method for making a semiconductor device including a...

2007-06-12

2007-06-12

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Plural fluid growth steps with intervening diverse operation

C438S197000, C257SE33055

Reexamination Certificate

active

11097612

ABSTRACT:
A method for making a semiconductor device may include forming a superlattice comprising a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base silicon monolayers defining a base silicon portion and an energy band-modifying layer thereon. The energy band-modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include forming at least one pair of oppositely-doped regions in the superlattice defining at least one semiconductor junction.

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