Method for protecting the susceptor during epitaxial growth by C

Details Method for protecting the susceptor during epitaxial growth by C Method for protecting the susceptor during epitaxial growth by C

1995-04-14

1998-08-11

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 95, 117200, 117900, C30B 2512

Patent

active

057922578

ABSTRACT:
A method for protecting a susceptor when SiC, a Group III-nitride or alloys thereof, is epitaxially grown by chemical vapor deposition on a substrate arranged on a surface of the susceptor includes the steps of heating the susceptor and thus the substrate and a gas mixture fed to the substrate for the growth, placing a plate made of SiC, an alloy of SiC and the material grown, or the material grown, on the susceptor and arranging the substrate on the plate.

REFERENCES:
patent: 4446817 (1984-05-01), Crawley
patent: 5119541 (1992-06-01), Ohmi et al.
patent: 5363800 (1994-11-01), Larkin et al.
patent: 5549749 (1996-08-01), Asai
A Novel Hot-Wall CVD Reactor for SiC Epitaxy, Kordina et al., Inst. Phys. Conf. Ser. No. 137, Chapter 1, paper presented at 5th SiC and Related Materials Conf., Washington, DC 1993.

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