Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-11-06
2007-11-06
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S662000, C438S795000, C438S476000, C257SE21134, C257SE21413, C257SE27111, C257SE29278, C257SE29293
Reexamination Certificate
active
11322658
ABSTRACT:
After crystallization of a semiconductor film is performed by irradiating first laser light (energy density of 400 to 500 mJ/cm2) in an atmosphere containing oxygen, an oxide film formed by irradiating the first laser light is removed. It is next performed to irradiate second laser light under an atmosphere that does not contain oxygen (at a higher energy density than that of the first laser light irradiation), thus to increase the flatness of the semiconductor film.
REFERENCES:
patent: 5244819 (1993-09-01), Yue
patent: 5352291 (1994-10-01), Zhang et al.
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5578520 (1996-11-01), Zhang et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5786241 (1998-07-01), Shimada
patent: 5789284 (1998-08-01), Yamazaki et al.
patent: 5861337 (1999-01-01), Zhang et al.
patent: 5960323 (1999-09-01), Wakita et al.
patent: 6027960 (2000-02-01), Kusumoto et al.
patent: 6048588 (2000-04-01), Engelsberg
patent: 6072194 (2000-06-01), Wakita et al.
patent: 6096581 (2000-08-01), Zhang et al.
patent: 6162667 (2000-12-01), Funai et al.
patent: 6242292 (2001-06-01), Yamazaki et al.
patent: 6300176 (2001-10-01), Zhang et al.
patent: 6348369 (2002-02-01), Kusumoto et al.
patent: 6436745 (2002-08-01), Gotou et al.
patent: 6559036 (2003-05-01), Ohtani et al.
patent: 6706568 (2004-03-01), Nakajima
patent: 6855584 (2005-02-01), Yamazaki et al.
patent: 6906344 (2005-06-01), Yamazaki et al.
patent: 2002/0173085 (2002-11-01), Nakajima et al.
patent: 2003/0148565 (2003-08-01), Yamanaka
patent: 07-183540 (1995-07-01), None
patent: 2001-060551 (2001-03-01), None
K. Suga et al., “The Effect of a Laser Annealing Ambient on the Morphology and TFT Performance of Poly-Si Films,” SID 00 Digest, pp. 534-537.
Miyairi Hidekazu
Nakajima Setsuo
Yamazaki Shunpei
Lindsay, Jr. Walter L
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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