Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2007-02-20

2007-02-20

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S295000, C257S296000, C257S294000, C257S298000, C257S299000, C257S300000, C257S301000, C257S302000, C257S303000, C257S304000, C257S305000, C257S306000, C257S307000, C257S308000, C257S309000, C257S311000, C257S312000, C257S313000

Reexamination Certificate

active

10823797

ABSTRACT:
A semiconductor device includes a first hydrogen barrier film, a capacitor device formed on the first hydrogen barrier film, and a second hydrogen barrier film formed to cover the capacitor device. The first and second hydrogen barrier films each contain at least one common type of atoms for allowing the first and second hydrogen barrier films to adhere to each other.

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