Method and apparatus for forming conformal SiN x films

Details Method and apparatus for forming conformal SiN x films Method and apparatus for forming conformal SiN x films

2007-11-27

2007-11-27

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S775000, C257SE21293

Reexamination Certificate

active

10621712

ABSTRACT:
A silicon nitride film formation method includes: Heating a substrate to be subjected to film formation to a substrate temperature; heating a wire to a wire temperature; supplying silane, ammonia, and hydrogen gases to the heating member; and forming a silicon nitride film on the substrate.

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Osono, S. et al., Elsevier Thin Solid Films 430 (2003) 165-169.

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