Nonvolatile memory device having STI structure

Details Nonvolatile memory device having STI structure Nonvolatile memory device having STI structure

2007-11-20

2007-11-20

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S316000

Reexamination Certificate

active

10859566

ABSTRACT:
A nonvolatile semiconductor device includes trench isolation layers formed in a semiconductor substrate, each trench isolation layer having a protruding portion having a height that is higher than a height of a surface of the semiconductor substrate, a control gate electrode crossing an active region between the trench isolation layers, a floating gate disposed between the control gate electrode and the active region, a gate interlayer dielectric film disposed between the floating gate and the control gate electrode, and a tunnel oxide layer disposed between the floating gate and the active region, wherein the protruding portion of each trench isolation layer has a sidewall profile where a width of the protruding portion continuously tapers from a lower portion of the protruding portion to an upper portion of the protruding portion.

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*A 0.67um2 Self-Aligned Shallow Trench Isolation Cell(SA-STI Cell) for 3V-Only 256MBIT Nand EEPROMs.

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