Semiconductor device having deep trench charge compensation...

Details Semiconductor device having deep trench charge compensation... Semiconductor device having deep trench charge compensation...

2007-02-13

2007-02-13

Tran, Long (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S339000, C257S342000

Reexamination Certificate

active

11057140

ABSTRACT:
In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a charge compensating trench formed in proximity to active portions of the device. The charge compensating trench includes a trench filled with various layers of semiconductor material including opposite conductivity type layers.

REFERENCES:
patent: 5216275 (1993-06-01), Chen
patent: 5438215 (1995-08-01), Tihanyi
patent: 5571738 (1996-11-01), Krivokapic
patent: 5872421 (1999-02-01), Potter
patent: 5998288 (1999-12-01), Gardner et al.
patent: 6184555 (2001-02-01), Tihanyi et al.
patent: 6191446 (2001-02-01), Gardner et al.
patent: 6210999 (2001-04-01), Gardner et al.
patent: 6255152 (2001-07-01), Chen
patent: 6274904 (2001-08-01), Tihanyi
patent: 6278165 (2001-08-01), Oowaki et al.
patent: 6355955 (2002-03-01), Gardner et al.
patent: 6410955 (2002-06-01), Baker et al.
patent: 6479352 (2002-11-01), Blanchard
patent: 6509240 (2003-01-01), Ren et al.
patent: 6512267 (2003-01-01), Kinzer et al.
patent: 6576516 (2003-06-01), Blanchard
patent: 6608350 (2003-08-01), Kinzer et al.
patent: 6693338 (2004-02-01), Saitoh et al.
patent: 6878989 (2005-04-01), Izumisawa et al.
patent: 6919610 (2005-07-01), Saitoh et al.
Data Sheet, Semiconductor Components Industries, LLC, NUF6106FCT1, 6 Channel EMI.
“A Novel Trench Concept for the Fabrication of Compensation Devices,” M. Rub, D. Ahlers, J. Baumgartl, G. Deboy, W. Friza, O. Haberlen andl. Steinigke, pp. 203-206., ISPSD 2003, Apr. 14th-17, Cambridge, UK.

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