MOS field-effect transistor

Details MOS field-effect transistor MOS field-effect transistor

2007-10-16

2007-10-16

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S362000, C257S402000, C257S403000

Reexamination Certificate

active

11172696

ABSTRACT:
A high-reliable depletion-type MOS field-effect transistor as a process monitor is provided. A diode formed in polycrystalline silicon and a diode formed in a semiconductor substrate form a bi-directional diode. The bi-directional diode connects a gate electrode with the semiconductor substrate in the depletion-type MOS field-effect transistor through metal wirings.

REFERENCES:
patent: 3999212 (1976-12-01), Usuda
patent: 5536958 (1996-07-01), Shen et al.

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