Power semiconductor device

Details Power semiconductor device Power semiconductor device

2007-11-13

2007-11-13

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257S492000, C257S493000

Reexamination Certificate

active

11265294

ABSTRACT:
Disclosed is a power semiconductor device, including a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type and a third semiconductor layer of a second conductivity type which are alternately and laterally arranged on the first semiconductor layer and, a fourth semiconductor layer of the second conductivity type selectively formed in the surface regions of the second and third semiconductor layers, a fifth semiconductor layer of the first conductivity type selectively formed in the surface region of the fourth semiconductor layer, and a control electrode formed on the surfaces of the second, fourth and fifth semiconductor layers, in which a layer thickness ratio A is given by the expression:in-line-formulae description="In-line Formulae" end="lead"?0<A=t/(t+d)≦0.72in-line-formulae description="In-line Formulae" end="tail"?where t is the thickness of the first semiconductor layer, and d is the thickness of the second semiconductor layer.

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U.S. Appl. No. 11/117,342, filed Apr. 29, 2005, Saito et al.
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