Method for forming aluminum interconnect

Details Method for forming aluminum interconnect Method for forming aluminum interconnect

2007-08-21

2007-08-21

Menz, Douglas M. (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S644000, C438S654000, C438S656000

Reexamination Certificate

active

11026918

ABSTRACT:
A method for forming an Al interconnect is disclosed. A disclosed method comprises: depositing a Ti layer on a substrate having predetermined devices; depositing a TiN layer on the entire surface of the Ti layer by performing a CVD process; performing a plasma treatment for the TiN layer; depositing an Al layer on the TiN layer; and forming an ARC on the entire surface of the Al layer.

REFERENCES:
patent: 5008216 (1991-04-01), Huang et al.
patent: 5008730 (1991-04-01), Huang et al.
patent: 5401675 (1995-03-01), Lee et al.
patent: 5403779 (1995-04-01), Joshi et al.
patent: 5627102 (1997-05-01), Shinriki et al.
patent: 5760475 (1998-06-01), Cronin et al.
patent: 5889328 (1999-03-01), Joshi et al.
patent: 6063703 (2000-05-01), Shinriki et al.
patent: 6069072 (2000-05-01), Konecni et al.
patent: 6110828 (2000-08-01), Guo et al.
patent: 6140228 (2000-10-01), Shan et al.
patent: 6169327 (2001-01-01), Choi et al.
patent: 6187667 (2001-02-01), Shan et al.
patent: 6200895 (2001-03-01), Givens et al.
patent: 6309971 (2001-10-01), Geha
patent: 6333261 (2001-12-01), Lin et al.
patent: 6338880 (2002-01-01), Akram
patent: 6522013 (2003-02-01), Chen et al.
patent: 6531192 (2003-03-01), Akram
patent: 6534398 (2003-03-01), Shan et al.
patent: 6627547 (2003-09-01), Geha
patent: 6656831 (2003-12-01), Lee et al.
patent: 6756302 (2004-06-01), Shan et al.
patent: 2002-33322 (2002-01-01), None
patent: 2001-0078086 (2001-08-01), None
Likeda Takaaki; Method of Manufacturing Semiconductor Device; Jan. 31, 2002; Patent Abstracts of Japan; Publication No. 2002-033322; Japanese Intellectual Property Office, Japan.
Ted Guo and Wei Ti Lee; Method for Plasma-Enhanced Chemical Vapor Deposition of Metal Nitride Layer; Aug. 20, 2001; Korean Patent Abstracts; Publication No. 1020010078086 A; Korean Intellectual Property Office, Republic of Korea.
Partial English translation of foreign patent document believed to be Korean Patent Publication No. 10-1999-6153.
Office Action, Korean Patent Application No. 10-2003-010278; dated Aug. 19, 2005.

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