Method of forming a thin film by plasma CVD of a...

Details Method of forming a thin film by plasma CVD of a... Method of forming a thin film by plasma CVD of a...

2007-06-12

2007-06-12

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S789000, C427S578000, C427S588000

Reexamination Certificate

active

10932816

ABSTRACT:
A method for forming a thin film includes: supplying an additive gas, a dilution gas, and a silicon-containing source gas into a reaction chamber wherein a substrate is placed; forming a thin film on the substrate by plasma CVD under a given pressure with a given intensity of radio-frequency (RF) power from a first point in time to a second point in time; at the second point in time, stopping the supply of the silicon-containing source gas; and at the second point in time, beginning reducing but not stopping the RF power, and beginning reducing the pressure, wherein the reduction of the RF power and the reduction of the pressure are synchronized up to a third point in time.

REFERENCES:
patent: 5714408 (1998-02-01), Ichikawa et al.
patent: 5741740 (1998-04-01), Jang et al.
patent: 6530380 (2003-03-01), Zhou et al.
patent: 6991959 (2006-01-01), Goundar et al.
patent: 2004/0076767 (2004-04-01), Satoh et al.
patent: 2004/0253828 (2004-12-01), Ozawa et al.

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