MTJ element for magnetic random access memory

Details MTJ element for magnetic random access memory MTJ element for magnetic random access memory

2007-08-28

2007-08-28

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S421000, C257S422000, C257S425000, C257S427000

Reexamination Certificate

active

10847362

ABSTRACT:
A magnetic random access memory according to an aspect of the present invention comprises a first magnetic layer in which a magnetization state is fixed, a second magnetic layer which has a shape different from that of the first magnetic layer and in which a magnetization state varies in accordance with write data, a non-magnetic layer which is arranged between the first magnetic layer and the second magnetic layer, and a third magnetic layer which surrounds the second magnetic layer.

REFERENCES:
patent: 6430085 (2002-08-01), Rizzo
patent: 6548849 (2003-04-01), Pan et al.
patent: 2006/0187705 (2006-08-01), Nakamura et al.
patent: 2002-289944 (2002-10-01), None
patent: 2003-249630 (2003-09-01), None
patent: 2003-332651 (2003-11-01), None

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