Method for generating a structure on a substrate

Details Method for generating a structure on a substrate Method for generating a structure on a substrate

2007-08-28

2007-08-28

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S703000, C257SE23132, C257SE23134, C257SE21043, C257SE21057

Reexamination Certificate

active

11062883

ABSTRACT:
The invention relates to a method for generating very short gate structures. In a method for generating a structure on a substrate in accordance with one embodiment of the invention, first of all a layer sequence of a first oxide layer, a first nitride layer and a second oxide layer is disposed onto the substrate. Subsequently, a portion of the second oxide layer and a portion of the first nitride layer is removed in order to expose a portion of the first oxide layer. Then, a part of the first nitride layer above the first oxide layer and below the second oxide layer is removed in order to expose the area of the structure.

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