Semiconductor device

Details Semiconductor device Semiconductor device

2007-08-14

2007-08-14

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27067, C438S214000

Reexamination Certificate

active

11219783

ABSTRACT:
The present invention is to provide a high-quality semiconductor device allowing independent control of threshold voltage values of gate electrodes of transistors which reside in a plurality of one-conductivity-type regions and in a reverse-conductivity-type region. The semiconductor comprises a P-type Si substrate109, a plurality of P-type wells103a,103bconnected to each other via the bottom surface side of the P-type Si substrate109, and an N-type well101provided so as to surround side portions of the plurality of P-type wells103a,103b. The semiconductor device also has NMOS transistors107a,107bprovided on the P-type wells103a,103b, and PMOS transistors105a,105b,105cprovided on the N-type well101. The semiconductor device still also has an N-type well133provided just under the N-type well101and connected therewith.

REFERENCES:
patent: 5917218 (1999-06-01), Choi et al.
patent: 6218708 (2001-04-01), Burr
patent: 6556477 (2003-04-01), Hsu et al.
patent: 6664608 (2003-12-01), Burr
patent: 2003/0013268 (2003-01-01), Rezvani et al.
patent: 2005/0270850 (2005-12-01), Wang et al.
patent: 2-283062 (1990-11-01), None
patent: 7-58289 (1995-03-01), None

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