Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2007-11-06
2007-11-06
Fourson, George R. (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S119000, C438S124000, C438S127000, C438S456000, C257SE23128
Reexamination Certificate
active
11004973
ABSTRACT:
A method is disclosed for making a wafer-level package for a plurality of MEMS devices. The method involves preparing a MEMS wafer and a lid wafer, each having respective bonding structures. The lid and MEMS wafers are then bonded together through the bonding structures. The wafers are substantially free of alkali metals and/or chlorine. IN a preferred embodiment, each wafer has a seed layer, a structural underlayer and an anti-oxidation layer. A solder layer, normally formed on the lid wafer, bonds the two wafers together.
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Ouellet Luc
Turcotte Karine
(Marks & Clerk)
DALSA Semiconductor Inc.
Fourson George R.
Mitchell Richard J.
Parker John M.
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