Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-06-26
2007-06-26
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S368000, C257S369000, C257SE29105
Reexamination Certificate
active
10952774
ABSTRACT:
It is an object to obtain a crystalline silicon film having preferable characteristics for a thin film transistor.A crystalline silicon film having improved crystallinity is obtained by the following steps: forming a silicon nitride film substantially in contact with an amorphous silicon film on glass substrate; introducing a catalyst element such as nickel; performing an annealing treatment at a temperature of 500 to 600° C. for crystallization; and further irradiating it with a laser light, thereby a crystalline silicon film having improved crystallinity can be obtained. By using the crystalline silicon film thus obtained, a semiconductor device such as a TFT having improved characteristic can be obtained.
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Hiroyuki Kuriyama e
Miyanaga Akiharu
Ohtani Hisashi
Yamaguchi Naoaki
Zhang Hongyong
Costellia Jeffrey L.
Nixon & Peabody LLP
Pert Evan
Semiconductor Energy Laboratory Co,. Ltd.
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