Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2007-08-28

2007-08-28

Richards, N. Drew (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S066000, C257S069000, C257SE29022

Reexamination Certificate

active

10734312

ABSTRACT:
A semiconductor device includes a thin film transistor including a semiconductor layer that includes a channel region, a source region and a drain region, a gate insulating film provided on the semiconductor layer, and a gate electrode for controlling the conductivity of the channel region, wherein the surface of the semiconductor layer includes a minute protruding portion, and the side surface inclination angle of the gate electrode is larger than the inclination angle of the protruding portion of the semiconductor layer.

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Official Communication issued in the corresponding Japanese Application No. 2002-371422, mailed on Jul. 11, 2006.

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