Method suitable for batch ion etching of copper

Details Method suitable for batch ion etching of copper Method suitable for batch ion etching of copper

2007-08-28

2007-08-28

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S720000, C438S725000, C134S001200, C216S063000, C216S075000

Reexamination Certificate

active

11131369

ABSTRACT:
A method for etching metal deposited on a substrate, the method comprising: depositing a metal layer above a substrate; coating at least a portion of the deposited metal layer with a photo-resist; pattering the photo-resist; etching the deposited metal layer with an inert gas plasma at an energy density of less than 0.5 Watt/cm2, the substrate being maintained at a temperature of less than 50° C.; and ashing a resultant crust with an ashing gas, the ashing gas comprising CF4and O2.

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