Semiconductor device and method for manufacturing thereof

Details Semiconductor device and method for manufacturing thereof Semiconductor device and method for manufacturing thereof

2007-02-27

2007-02-27

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S532000, C257S761000, C257S763000, C438S003000, C438S239000, C438S686000

Reexamination Certificate

active

10865812

ABSTRACT:
Disclosed in a semiconductor device comprising a semiconductor substrate, and a ferroelectric layer provided above the semiconductor substrate and sandwiched between a lower electrode and an upper electrode, the lower electrode comprising a strontium ruthenate film having a thickness of 2 nm or less.

REFERENCES:
patent: 6096434 (2000-08-01), Yano et al.
patent: 6194228 (2001-02-01), Fujiki et al.
patent: 6351006 (2002-02-01), Yamakawa et al.
patent: 11-195768 (1999-07-01), None
patent: 2000-208725 (2000-07-01), None

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