Memory device with improved data retention

Details Memory device with improved data retention Memory device with improved data retention

2007-12-11

2007-12-11

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S310000

Reexamination Certificate

active

11089707

ABSTRACT:
The present memory device includes a first electrode, a passive layer, for example Cu2S, on the first electrode, an active layer on the passive layer and including an azole compound, and a second electrode on the active layer. The azoles compound may be for example benzotriazole or 1,2,4-triazole. The active layer may also include Cu2O.

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