Photoresists and processes for microlithography

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S326000, C430S905000, C430S907000, C430S910000, C430S914000

Reexamination Certificate

active

10970133

ABSTRACT:
Positive photoresists and associated processes for microlithography in the ultraviolet (UV) and violet are disclosed. The photoresists comprise (a) a branched polymer containing protected acid groups and (b) at least one photoacid generator. The photoresists have high transparency throughout the UV, good development properties, high plasma etch resistance and other desirable properties, and are useful for microlithography in the near, far, and extreme UV, particularly at wavelengths less than or equal to 365 nm.

REFERENCES:
patent: 4613657 (1986-09-01), Narita et al.
patent: 4665144 (1987-05-01), Ohmori et al.
patent: 5061602 (1991-10-01), Koch et al.
patent: 5071731 (1991-12-01), Chen et al.
patent: 5077174 (1991-12-01), Bauer et al.
patent: 5120629 (1992-06-01), Bauer et al.
patent: 5120633 (1992-06-01), Bauer et al.
patent: 5145764 (1992-09-01), Bauer et al.
patent: 5252427 (1993-10-01), Bauer et al.
patent: 5262281 (1993-11-01), Bauer et al.
patent: 5492793 (1996-02-01), Breyta et al.
patent: 5585222 (1996-12-01), Kaimoto et al.
patent: 5861231 (1999-01-01), Barclay et al.
patent: 5891603 (1999-04-01), Kodama et al.
patent: 5928840 (1999-07-01), Matsuo et al.
patent: 5942367 (1999-08-01), Watanabe et al.
patent: 6033828 (2000-03-01), Shimada
patent: 6117962 (2000-09-01), Weng et al.
patent: 6136498 (2000-10-01), Jagannathan et al.
patent: 6156481 (2000-12-01), Takeda et al.
patent: 6165678 (2000-12-01), Allen et al.
patent: 6210856 (2001-04-01), Lin et al.
patent: 6884562 (2005-04-01), Schadt et al.
patent: 2001/0010690 (2001-08-01), Hatakeyama et al.
patent: 2001/0018162 (2001-08-01), Hatakeyama et al.
patent: 2001/0051670 (2001-12-01), Goupil et al.
patent: 0473547 (1991-08-01), None
patent: 0773478 (1997-05-01), None
patent: 0789278 (1997-08-01), None
patent: 1996101506 (1994-09-01), None
patent: 1998031310 (1996-07-01), None
patent: 1998111569 (1996-12-01), None
patent: WO91/15810 (1991-10-01), None
patent: WO9215628 (1992-09-01), None
Yamana M, Iiani T, Yoshimo H, Hashimoto S, Tanabe H, and Kasama K, “Deblocking Reaction of Chemically Amplified ArF Positive Resists” Proc. Spie—Int. Soc. Opt. Eng., vol. 3333, No. 1, Jun. 1998 pp. 32-42 (XP002130419).
Database WPI, Section Ch, Week 199815, Derwent Publications LTD, London, GB: Class A89 (XP002130420), 1998.
Introduction to Microlithography, Second Edition, American Chemical Society, Chapter 3, pp. 139-267, “Organic Resist Materials” (1994).
Journal of Photopolymer Science and Technology, vol. 10, No. 3 (1997) 511-520.
Macromolecules, 30, pp. 6517-6524, (1997) “Synthesis of Cycloolefin-Maleic Anhydride Alternating Copolymers for 193 nm Imaging”.
SPIE, vol. 2724, pp. 355-364, T. Wellow, F. Houlihan, O Nelamasu, E. Chandross, T. Neenan, and E. Reichmanis, 1996.
Patent Abstracts of Japan, Publication No. 09-159998, Date of Publication: Jul. 22, 1997, Applicant: Matsushita Electric Ind Co. LTD.
Patent Abstracts of Japan, Publication No. 09-101506, Date of Publication: Apr. 16, 1996, Applicant: Japan Synthetic Rubber Co. LTD.
Patent Abstracts of Japan, Publication No. 10-069071, Date of Publication: Mar. 10, 1998, Applicant: Internall Business Mach Corp <IBM>.
Patent Abstracts of Japan, Publication No. 10-031310, Date of Publication: Feb. 3, 1996, Applicant: Japan Synthetic Rubber Co. LTD.
Patent Abstracts of Japan, Publication No. 10-111569, Date of Publication: Apr. 26, 1998, Applicant: Japan Synthetic Rubber Co. LTD.
Patent Abstracts of Japan, Publication No. 04-230645, Date of Publication: Aug. 19, 1992, Applicant: Ciba Geigy Ag.
Herter et al., Synthesis and Applications of Acid-Labile Acrylic Polymers, International Symposium on New Polymers, 1991, 137-149.
Gabor et al., Poly(tert-butyl methacrylate)-Based Block and Random Copolymer Resists Designed for 193 nm Wavelength Exposure Tools, Chem. Mater. 1996, vol. 8, pp. 2282-2290.
Gabor et al., Silicon-Containing Block Copolymer Resist Materials, Microelectronics Technology, Chapter 19, pp. 281-298.
Ober et al., Block Copolymers as Lithographic Materials, Journal of Photopolymer Science and Technology, vol. 9, No. 1, 1996, pp. 1-12.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Photoresists and processes for microlithography does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photoresists and processes for microlithography, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photoresists and processes for microlithography will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3843991

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.