Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

2007-10-02

2007-10-02

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S390000, C257S510000, C257S544000

Reexamination Certificate

active

10817861

ABSTRACT:
In a semiconductor integrated circuit device, semiconductor elements formed in active regions included in a first element formation portion (stress transition region) in a peripheral circuit formation portion are not electrically driven, while only semiconductor elements of a second element formation portion (steady stress region) are electrically driven. Therefore, the second element formation portion in the peripheral circuit formation portion is located away from an outer STI region so as to be hardly affected by compressive stress.

REFERENCES:
patent: 2002/0047138 (2002-04-01), Watanabe et al.
patent: 2003/0127697 (2003-07-01), Ohta et al.
patent: 2003/0132473 (2003-07-01), Kumagai et al.
patent: 2004/0152243 (2004-08-01), Kuroda et al.
patent: P2001-332706 (2001-11-01), None
patent: P2002-368080 (2002-12-01), None

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