Structure and method for low Vss resistance and reduced DIBL...

Details Structure and method for low Vss resistance and reduced DIBL... Structure and method for low Vss resistance and reduced DIBL...

2007-11-27

2007-11-27

Sarkar, Asok Kumar (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29300

Reexamination Certificate

active

10762445

ABSTRACT:
According to one exemplary embodiment, a floating gate memory cell comprises a stacked gate structure situated on a substrate and situated over a channel region in the substrate. The floating gate memory cell further comprises a recess formed in the substrate adjacent to the stacked gate structure, where the recess has a sidewall, a bottom, and a depth. According to this exemplary embodiment, the floating gate memory cell further comprises a source situated adjacent to the sidewall of the recess and under the stacked gate structure. The floating gate memory cell further comprises a Vss connection region situated under the bottom of the recess and under the source, where the Vss connection region is connected to the source. The Vss connection region being situated under the bottom of the recess causes the source to have a reduced lateral diffusion in the channel region.

REFERENCES:
patent: 5607881 (1997-03-01), Huang
patent: 5640035 (1997-06-01), Sudo et al.
patent: 6147379 (2000-11-01), Hori et al.
patent: 6180441 (2001-01-01), Yue et al.
patent: 6531347 (2003-03-01), Huster et al.
patent: 6721205 (2004-04-01), Kobayashi et al.
patent: 2001/0031534 (2001-10-01), Ahn et al.
patent: 2003/0006462 (2003-01-01), Quek et al.
patent: 0401 174 (1990-12-01), None

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