Reduced hydrogen sidewall spacer oxide

Details Reduced hydrogen sidewall spacer oxide Reduced hydrogen sidewall spacer oxide

2007-02-06

2007-02-06

Dickey, Thomas (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S315000, C257S320000, C257S321000, C257S324000, C257S637000, C257S640000

Reexamination Certificate

active

10959689

ABSTRACT:
An embodiment of the invention is a method of making a semiconductor structure10where the spacer oxide layer90is formed by a hydrogen free precursor CVD process. Another embodiment of the invention is a semiconductor structure10having a spacer oxide layer90with a hydrogen content of less than 1%.

REFERENCES:
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patent: 6555865 (2003-04-01), Lee et al.
patent: 2004/0207013 (2004-10-01), Tsuchiya et al.
patent: 2005/0014354 (2005-01-01), Ozawa et al.
patent: 2005/0040479 (2005-02-01), Koldiaev et al.
patent: 2005/0112817 (2005-05-01), Cheng et al.
patent: 2006/0249800 (2006-11-01), Tanaka
patent: 2003-204063 (2003-07-01), None
patent: 2003-264247 (2003-09-01), None
P. Kohli, et al., “Effect of Nitride Sidewall Spacer Process on Boron Dose Loss in Ultra Shallow Junction Formation”.

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